A Closer Look At:

Quantum Image Sensing

PAT-PD
Photon Assisted Tunneling Photo Detector

New photodetector technology redefining what's possible with standard silicon CMOS image sensors without compromise to performance or efficiency.

NIR + Visible image sensing capabilities integrated into a single device.

World's first all-in-one silicon based, Quantum Pixel image sensor with visible and near infrared capabilities.

Image capture in total darkness using PAT-PD VGA IS + IR  LED

Live capture of blood vessels using silicon based PAT-PD VGA IS + IR  LED

Ultra High Light Sensitivity and Low-light Capabilities

Able to capture photo data in real-time and low light environment without distortion.

PAT-PD VGA image sensor sensitivity: ~10^6 A/W.

(* 1 lux of light is equivalent to the brightest from one candle, one meter away in a dark room)

PAT-PD VGA Image Sensor in 110nm

PAT-PD VGA Image Sensor in 110nm process

Bright light conditions: 50 lux

Equivalent to Fireplace lit room

Low Light Conditions: 0.1 lux

Equivalent to Night (no moon)

24.2MP DSLR (No Flash) 

Low Light Conditions: 0.1 lux

Equivalent to Night (no moon)

Quantum Pixel Integration for standard silicon CMOS Process

 

PAT-PD technology can be integrated easily for any standard CMOS fabrication process.

PAT-PD's innovative pixel is formed by a revolutionary new approach when compared to the traditional photodiode structure using standard silicon.  The principle of quantum tunneling allows the same photon-activated current flow to trigger with exponentially fewer photons and thus reduces the light intensity requirement when compared to the traditional P-N Junction photodiode structure.

Quantum Tunneling Effects based on patented principles of 

  • SEMD-Single Electron Memory Device

  • SPDD-Single Photon Detection Device

 

Quantum Pixel Performance

PAT-PD v.s  Standard Image Sensor Spectral Wavelength Responsivity Comparison 

PAT-PD's responsivity (or sensitivity) corresponding at wavelength of 300nm-1600nm, outperforms many image sensor technologies including Si CMOS, compound material CCD, and even Black Silicon.

It is through SeeDevice's patented quantum tunneling physics that the high rate of electron-hole pairs can be activated without the need for a proportional amount of photons. Not only is this method more efficient by several orders of magnitude, but the additional benefit of the reduced transition time equates to unparalleled image capture performance and fidelity. 

PAT-PD Quantum Pixel Technical Specifications 

PAT-PD enables device development with no compromise on technical specification. One device can have high resolution, high frame rate, high sensitivity, and a wide dynamic range without modifications.

PAT-PD Image Sensors - Key Benefits
 

SeeDevice's proprietary PAT-PD technology utilizes principles of quantum mechanics and nanotechnology to produce groundbreaking improvements in dynamic range, sensitivity, and low light capabilities without compromising size and efficiency. 

©2019 SeeDevice, Inc. All rights reserved.

References to "SeeDevice" may mean SeeDevice Incorporated, subsidiaries or business units within the SeeDevice corporate structure, as applicable.
SeeDevice Incorporated includes SeeDevice's licensing business and all proprietary intellectual property. 
Materials that are as of a specific date, including but not limited to press releases, presentations, blog posts and webcasts, may have been superseded by subsequent events or disclosures.
Nothing in these materials is an offer to sell any of the components or devices referenced herein.

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